| 摘要 |
<p>PROBLEM TO BE SOLVED: To achieve high integration and reduction in parasitic capacitance.SOLUTION: A semiconductor device according to an embodiment comprises: a foundation layer; a first wiring provided on the foundation layer and extending in a first direction; a second wiring provided adjacent to the first wiring on the foundation layer and extending in the first direction; an insulating layer provided between the first wiring and the second wiring; a third wiring provided between the foundation layer and the insulating layer and extending in the first direction. A group of wirings including the first wiring, the second wiring, and the third wiring is periodically aligned in a second direction crossing the first direction.</p> |
