| 主权项 |
1. A semiconductor device, comprising:
a normally-off transistor having a first source connected to a source terminal, a first drain, and a first gate connected to a gate terminal; and a normally-on transistor having a second source connected to the first drain, a second drain connected to a drain terminal, and a second gate connected to the source terminal, wherein a withstand voltage between the first source and the first drain when the normally-off transistor is turned off is lower than the withstand voltage between the second source and the second gate of the normally-on transistor. |
