| 发明名称 |
CLEANING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM |
| 摘要 |
A cleaning method includes (a) providing a process chamber after forming an oxide film on a substrate in the process chamber formed by a reaction tube and a manifold supporting the reaction tube by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate through a first nozzle in the manifold extending upward to an inside of the reaction tube, and supplying an oxidizing gas to the substrate through a second nozzle in the manifold extending upward to the inside of the reaction tube; and (b) cleaning an inside of the process chamber. The step (b) includes a first cleaning process of supplying a hydrogen fluoride gas into the reaction tube through the second nozzle; and a second cleaning process of supplying a hydrogen fluoride gas onto an inner wall surface of the manifold through a third nozzle disposed in the manifold. |
| 申请公布号 |
US2014287594(A1) |
申请公布日期 |
2014.09.25 |
| 申请号 |
US201414223132 |
申请日期 |
2014.03.24 |
| 申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
TERASAKI Masato;AKAE Naonori;HORITA Hideki |
| 分类号 |
B08B9/00;H01L21/02;H01L21/67 |
主分类号 |
B08B9/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A cleaning method, comprising:
(a) providing a process chamber after forming an oxide film on a substrate in the process chamber formed by a reaction tube and a manifold supporting the reaction tube by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate in the process chamber through a first nozzle disposed in the manifold and extending upward from the manifold to an inside of the reaction tube, and supplying an oxidizing gas to the substrate in the process chamber through a second nozzle disposed in the manifold and extending upward from the manifold to the inside of the reaction tube; and (b) cleaning an inside of the process chamber, wherein the step (b) includes: a first cleaning process of supplying a hydrogen fluoride gas into the reaction tube through the second nozzle; and a second cleaning process of supplying a hydrogen fluoride gas onto an inner wall surface of the manifold through a third nozzle disposed in the manifold. |
| 地址 |
Tokyo JP |
