| 摘要 |
A thin film transistor and a manufacturing method therefor, an array substrate, and a display apparatus. The thin film transistor comprises: a substrate, and a gate, a source, a drain and a semiconductor layer all formed on the substrate; a gate insulation layer located between the gate and the semiconductor layer or located between the gate, the source and the drain, and an etched blocking layer located between the semiconductor layer, the source and the drain and having a source contact hole and a drain contact hole; and a source buffer layer between the source and the semiconductor layer, and a drain buffer layer between the drain and the semiconductor layer, the source and the drain being metallic copper electrodes and the buffer layers being copper alloy layers. By forming a source buffer layer and a drain buffer layer, the adhesive force of a source and a drain above the source buffer layer and the drain buffer layer and a semiconductor layer under the source buffer layer and the drain buffer layer can be improved, thereby improving the performance of a TFT and improving the quality of an image. |
