INTEGRATED INDUCTOR AND INTEGRATED INDUCTOR FABRICATING METHOD

摘要

The present invention provides an integrated inductor and an integrated inductor fabricating method. The integrated inductor comprises: a semiconductor substrate, a plurality of through silicon vias (TSVs), and an inductor. The TSVs are formed in the semiconductor substrate and arranged in a specific pattern, and the TSVs are filled with a metal material to form a patterned ground shield (PGS). The inductor is formed above the semiconductor substrate. The integrated inductor fabricating method comprises: forming a semiconductor substrate; forming a plurality of TSVs in the semiconductor substrate and arranging the TSVs in a specific pattern; filling the TSVs with a metal material to form a PGS. forming an inductor above the semiconductor substrate.

主权项

1. An integrated inductor, comprising:
a semiconductor substrate; a plurality of through silicon vias (TSVs), formed in the semiconductor substrate and arranged in a specific pattern, and the TSVs are filled with a metal material to form a patterned ground shield (PGS); and an inductor, formed above the semiconductor substrate.