SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

According to one embodiment, a method for manufacturing a semiconductor light-emitting device includes growing a semiconductor film including a group III nitride semiconductor on a silicon substrate, dividing the grown semiconductor film into a plurality of sections by selectively removing the semiconductor film, forming an aluminum film to cover the semiconductor film, removing the aluminum film selectively, oxidizing the remained aluminum film, and removing the silicon substrate.

主权项

1. A method of manufacturing a semiconductor light-emitting device, the method comprising:
growing a semiconductor film including a group III nitride semiconductor on a silicon substrate; dividing the semiconductor film into a plurality of sections by pattern removal of portions of the semiconductor film; forming an aluminum film to cover the semiconductor film; selectively removing portions of the aluminum film to form opening where the semiconductor film is exposed; oxidizing the remaining aluminum film; forming an electrode in the opening and on the upper face of the semiconductor film; and removing the silicon substrate by etching.