| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem where the reliability of a nonvolatile memory cell is deteriorated if the step-up rate of a step-up voltage is inappropriately set in performing write/erasure processing by applying the step-up voltage to the nonvolatile memory cell.SOLUTION: A semiconductor device (1) includes: a step-up rate adjustment circuit (S1) that generates a step-up rate control signal (trc_vmg); a charge current adjustment circuit (A1) that outputs a charge adjustment current (Ith) in response to the step-up rate control signal; and a step-up circuit (CP1) that generates a step-up voltage (vmg) in response to a drive clock (clk) and the charge adjustment current. The step-up rate of the step-up voltage changes in response to the step-up rate control signal. |
