PRODUCTION METHOD OF NITRIDE SEMICONDUCTOR CRYSTAL OF GROUP 13 METAL IN PERIODIC TABLE, AND PRODUCTION APPARATUS USED THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a high-quality nitride semiconductor crystal of a group 13 metal in the periodic table having a small film thickness distribution by a vapor growth method.SOLUTION: When growing a nitride semiconductor crystal of a group 13 metal in the periodic table in a reaction vessel by using a principal surface 10 of a ground substrate 9 as a growth surface, in the growth surface of the ground substrate 9, the area ratio of a region 11 included in a projection locus 6 when a supply port 2 of a nozzle 1 for supplying gas containing a raw material of a group 13 metal in the periodic table is projected toward its supply direction is set to be 50% or more.