| 摘要 |
<p>The present invention provides a method for forming a joint (13) between a high power semiconductor (11) and a metallization of a substrate (12), comprising the steps of providing an electrically conducting preform (14), bonding the preform (14) onto the substrate (12), thereby forming a first bonding layer (15) between the substrate (12) and the preform (14), and bonding the high power semiconductor (11) onto the preform (14), thereby forming a second bonding layer (16) between the preform (14) and the high power semiconductor (11). The present invention further provides a method for mounting a high power semiconductor (11) onto a metallization of a substrate (12), comprising the step of forming a joint (13) according to the above method between the high power semiconductor (11) and the substrate (12). Still further, the invention provides a joint (13) between a high power semiconductor (11) and a metallization of a substrate (12), whereby the joint (13) is formed according to the above method as well as an assembly (10) comprising a high power semiconductor (11) and a substrate (12), whereby the substrate (12) comprises a metallization and the high power semiconductor (11) is mounted to the metallization with a joint (13) formed according to the above method.</p> |
