| 摘要 |
<p>Provided is a method for forming fine patterns of a semiconductor device. The method for forming the fine patterns of a semiconductor device includes forming first openings which expose a lower layer by patterning a hard mask layer and a buffer mask layer which are successively stacked, forming sacrificial patterns which fill the first openings and protrude from the upper surface of the buffer mask layer, forming a spacer pattern which fills a gap between two adjacent sacrificial patterns and has gap regions which expose a part of the buffer mask layer among at least three adjacent sacrificial patterns, forming expanded holes by etching a part of the buffer mask layer exposed to the gap regions of the spacer pattern, forming second openings by etching a part of the hard mask layer exposed to the expanded holes, and etching the lower layer by using the hard mask having the first and the second openings as an etching mask.</p> |
