发明名称 |
METHODS FOR DEPOSITING GROUP III-V LAYERS ON SUBSTRATES |
摘要 |
Methods for depositing a group III-V layer on a substrate are disclosed herein. In some embodiments a method includes depositing a first layer comprising at least one of a first Group III element or a first Group V element on a silicon-containing surface oriented in a <111> direction at a first temperature ranging from about 300 to about 400 degrees Celsius; and depositing a second layer comprising second Group III element and a second Group V element atop the first layer at a second temperature ranging from about 300 to about 600 degrees Celsius. |
申请公布号 |
KR20140113724(A) |
申请公布日期 |
2014.09.24 |
申请号 |
KR20147022670 |
申请日期 |
2013.01.09 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SANCHEZ ERROL ANTONIO C.;HUANG YI CHIAU;BAO XINYU |
分类号 |
H01L21/336;H01L21/18;H01L21/20;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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