Semiconductor interconnect structure having enhanced performance and reliability

摘要

An interconnect structure and method for fabricating the interconnect structure having enhanced performance and reliability, by minimizing oxygen intrusion into a seed layer and an electroplated copper layer of the interconnect structure, are disclosed. At least one opening in a dielectric layer is formed. A sacrificial oxidation layer disposed on the dielectric layer is formed. The sacrificial oxidation layer minimizes oxygen intrusion into the seed layer and the electroplated copper layer of the interconnect structure. A barrier metal layer disposed on the sacrificial oxidation layer is formed. A seed layer disposed on the barrier metal layer is formed. An electroplated copper layer disposed on the seed layer is formed. A planarized surface is formed, wherein a portion of the sacrificial oxidation layer, the barrier metal layer, the seed layer, and the electroplated copper layer are removed. In addition, a capping layer disposed on the planarized surface is formed.

主权项

1. An interconnect structure comprising:
at least one opening in a dielectric layer; a sacrificial oxidation layer disposed in the opening; a barrier metal layer disposed on the sacrificial oxidation layer; a seed layer disposed on the barrier metal layer, wherein the seed layer comprises copper and impurities, and wherein the impurities include manganese, aluminum, tin, or a combination thereof; an electroplated copper layer disposed on the seed layer; and a capping layer disposed over the dielectric layer and the electroplated copper layer.