Semiconductor apparatus

摘要

A semiconductor apparatus having a bootstrap-type driver circuit includes a cavity for a SON structure formed below a bootstrap diode Db, and a p-type floating region formed in a n− epitaxial layer between a bootstrap diode Db and a p-type GND region at the ground potential (GND). The p-type floating region extends to the cavity for suppressing the leakage current caused by the holes flowing to the p− substrate in charging an externally attached bootstrap capacitor C1. The semiconductor apparatus which includes a bootstrap-type driver circuit facilitates suppressing the leakage current caused by the holes flowing to the p− substrate, when the bootstrap diode is biased in forward.

主权项

1. A semiconductor apparatus comprising:
a semiconductor substrate of a p-type; a semiconductor layer of an n-type formed on the semiconductor substrate; a separation region of the p-type formed in the semiconductor layer from a surface of the semiconductor layer to a boundary between the semiconductor layer and the semiconductor substrate, the separation region zoning an island region; a semiconductor device formed in the surface of the island region; a cathode region of the n-type formed in a surface portion of the island region, the cathode region being between the separation region and the semiconductor device, the cathode region being spaced apart from the separation region and the semiconductor device; an anode region of the p-type formed in the surface portion of the island region, the anode region being between the separation region and the cathode region, the anode region being spaced apart from the separation region and the cathode region; an insulating separation region positioned below the cathode region, below the anode region, and below a region between the cathode region and the anode region, the insulating separation region being located on or at least partially in the semiconductor substrate; and a first floating region of the p-type formed between the separation region and the anode region, the first floating region being spaced apart from the separation region and the anode region, the first floating region being formed in the semiconductor layer between the surface thereof and the insulating separation region and formed such that the first floating region reaches the insulating separation region from the surface of the semiconductor layer, the semiconductor substrate and the separation region being biased at a potential lower than potentials of the anode region and the cathode region.