| 摘要 |
<p>Provided is a method for qualifying a semiconductor wafer for subsequent processing, such as thermal processing. A plurality of locations is set on the periphery of the semiconductor wafer, and one or more properties, such as oxygen concentration and the density of bulk micro defects, are measured at each of the plurality of locations. A statistical profile associated with the periphery of the semiconductor wafer is determined based on the one or more properties measured at the plurality of locations. The semiconductor wafer is subsequently thermally treated when the statistical profile falls within a predetermined range. The semiconductor wafer is rejected from the subsequent processing when the statistical profile deviates from the predetermined range. Therefore, wafers prone to distortion, bending, and breakage are rejected from the subsequent thermal processing.</p> |
