| 发明名称 | Operating method of data storage device | ||
| 摘要 | Provided is an operating method of a data storage device including a plurality of nonvolatile memory devices. The operating method includes the steps of: dividing storage areas of the nonvolatile memory devices into a first memory area and a second memory area; determining wear levels of each of the first memory area and the second memory area; and varying a ratio of the first memory area and the second memory area according to the determined wear levels. | ||
| 申请公布号 | US8843697(B2) | 申请公布日期 | 2014.09.23 |
| 申请号 | US201213602276 | 申请日期 | 2012.09.03 |
| 申请人 | SK Hynix Inc. | 发明人 | Kim Eui Jin |
| 分类号 | G06F13/10;G06F12/02 | 主分类号 | G06F13/10 |
| 代理机构 | William Park & Associates Patent Ltd. | 代理人 | William Park & Associates Patent Ltd. |
| 主权项 | 1. An operating method of a data storage device including a plurality of nonvolatile memory devices, the operating method comprising the steps of: dividing storage areas of the nonvolatile memory devices into a first memory area and a second memory area; determining wear levels of each of the first memory area and the second memory area; and varying a ratio of the first memory area and the second memory area according to the determined wear levels. | ||
| 地址 | Gyeonggi-do KR | ||