Multi-level memory cell

摘要

Some embodiments include a memory device and methods of forming the same. The memory device can include an electrode coupled to a memory element. The electrode can include different materials located at different portions of the electrode. The materials can create different dielectrics contacting the memory elements at different locations. Various states of the materials in the memory device can be used to represent stored information. Other embodiments are described.

主权项

1. A memory device comprising:
an electrode; and a memory material coupled to the electrode, the electrode and the memory material configured to create a first dielectric between a first portion of the electrode and a first portion of the memory material in response to a first voltage applied to the electrode, and to create a second dielectric between a second portion of the electrode and a second portion of the memory material in response to a second voltage applied to the electrode.