THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor which can reduce a driving voltage.SOLUTION: A thin film transistor 10 comprises a silicon substrate 1, a channel layer 2, a source electrode 3, a drain electrode 4, an insulation film 5 and a gate electrode 6. The channel layer 2, the source electrode 3 and the drain electrode 4 are linearly arranged on the raised portions of an uneven shape of the silicon substrate 1 along a lengthwise direction of the raised portions. The channel layer 2 is composed of a carbon nanowall thin film. The source electrode 3 and the drain electrode 4 are composed of metal carbon nanowall thin films. The insulation film 5 is composed of SiOand arranged in contact with a rear face of the silicon substrate 1. The gate electrode 6 is composed of a lamination structure of Ti/Au and arranged in contact with the insulation film 5.