| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a high quality silicon crystal thin film.SOLUTION: The method of forming a silicon crystal thin film in which, by translating relatively in parallel irradiation means that forms a laser spot of a longitudinal shape on a planar substrate on which a silicon film is formed, silicon is continuously recrystallized in the translation direction, is characterized by translating the irradiation means in parallel by tilting a shorter side direction of the laser spot by a predetermined angle from 0° in reference to the translation direction. |
