| 发明名称 |
SOURCE-MASK OPTIMIZATION FOR A LITHOGRAPHY PROCESS |
| 摘要 |
Systems and methods for optimizing a source shape and a mask shape for a lithography process are disclosed. One such method includes performing a mask optimization for the lithography process in accordance with a set of parameters including at least one variable representation, at least one objective and problem constraints. Further, a light source optimization for the lithography process is performed in accordance with the set of parameters. In addition, a joint light source-mask optimization is performed in accordance with the set of parameters. The method further includes iterating at least one of the mask optimization or the light source optimization by changing at least one of the variable representation, the objective or the problem constraints to maximize a common process window for the lithography process. |
| 申请公布号 |
US2014282291(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313836327 |
申请日期 |
2013.03.15 |
| 申请人 |
CORPORATION INTERNATIONAL BUSINESS MACHINES |
发明人 |
Inoue Tadanobu;Melville David O.;Rosenbluth Alan E.;Sakamoto Masaharu;Tian Kehan |
| 分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for optimizing a source shape and a mask shape for a lithography process comprising:
performing a mask optimization for the lithography process in accordance with a set of parameters including at least one variable representation, at least one objective and problem constraints; performing a light source optimization for the lithography process in accordance with the set of parameters; performing a joint light source-mask optimization in accordance with the set of parameters; and iterating, by a hardware processor, at least one of said mask optimization or said light source optimization by changing at least one of the variable representation, the objective or the problem constraints to maximize a common process window for the lithography process. |
| 地址 |
US |
