PATTERNING METHOD FOR SEMICONDUCTOR DEVICE FABRICATION

摘要

A method includes forming a first pattern having a first opening on a semiconductor substrate. The first opening is then filled. A second pattern of a first and second feature, interposed by the filled opening, is formed on the semiconductor substrate. Spacer elements then are formed on sidewalls of the filled opening, the first feature and the second feature. After forming the spacer elements, the material comprising first and second features is removed to form a second opening and a third opening. The filled opening, the second opening and the third opening are used as a masking element to etch a target layer of the substrate.

主权项

1. A method, comprising:
forming a first pattern on a semiconductor substrate having a target layer, wherein the first pattern includes a first opening; filling the first opening with a fill material, thereby forming a filled opening; forming a second pattern on the semiconductor substrate, wherein the second pattern includes a first feature and a second feature, the filled opening interposing the first and second features; forming a spacer elements on sidewalls of the filled opening, the first feature, and the second feature; after forming the spacer elements, removing material comprising first and second features to form a second opening and a third opening, wherein sidewalls of the second and third openings are defined by the spacer elements; and using the filled opening, the second opening and the third opening as a masking element to etch the target layer.