| 发明名称 |
Post-Deposition Treatment Methods For Silicon Nitride |
| 摘要 |
Provided are methods post deposition treatment of films comprising SiN. Certain methods pertain to providing a film comprising SiN; and exposing the film to an inductively coupled plasma, capacitively coupled plasma or a microwave plasma to provide a treated film with a modulated film stress and/or wet etch rate in dilute HF. Certain other methods comprise depositing a PEALD SiN film followed by exposure to a plasma nitridation process or a UV treatment to provide a treated film. |
| 申请公布号 |
US2014273530(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201414212425 |
申请日期 |
2014.03.14 |
| 申请人 |
Nguyen Victor;Roflox Isabelita;Balseanu Mihaela;Xia Li-Qun;Pan Heng;Liu Wei;Bevan Malcolm J.;Olsen Christopher S.;Swenberg Johanes F. |
发明人 |
Nguyen Victor;Roflox Isabelita;Balseanu Mihaela;Xia Li-Qun;Pan Heng;Liu Wei;Bevan Malcolm J.;Olsen Christopher S.;Swenberg Johanes F. |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of treating a film comprising SiN, the method comprising:
providing a film comprising SiN; and exposing the film to an inductively coupled plasma, capacitively coupled plasma or a microwave plasma to provide a treated film with a modulated film stress and/or wet etch rate in dilute HF. |
| 地址 |
Novato CA US |
