| 发明名称 |
METHOD FOR MANUFACTURING GRAPHENE FILM AND GRAPHENE CHANNEL OF TRANSISTOR |
| 摘要 |
The present invention provides a method for manufacturing a graphene film and a graphene channel of transistor. The graphene film is prepared at a low temperature by using molecular beam epitaxy technique, and the graphene channel is able to fit into a transistor. The excellent characteristic of current modulation within graphene transistors is observed. |
| 申请公布号 |
US2014273414(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201314028760 |
申请日期 |
2013.09.17 |
| 申请人 |
Academia Sinica |
发明人 |
LIN SHIH-YEN;LIN MENG-YU |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a graphene film, comprising following steps:
(a) annealing a first substrate in a furnace filled with a mixed gas; (b) moving the first substrate into a growing chamber of a molecular beam epitaxy system, wherein a temperature of the growing chamber is ranged from room temperature to 500° C.; (c) heating a carbon source set in the molecular beam epitaxy system to evaporate carbon atoms onto a surface of the first substrate; and (d) depositing the carbon atoms on the surface of the first substrate to grow the graphene film. |
| 地址 |
Taipei City TW |
