发明名称 POWER MANAGEMENT FOR A MEMORY DEVICE
摘要 An improved method and apparatus for performing power management in a memory device is disclosed.
申请公布号 US2014281611(A1) 申请公布日期 2014.09.18
申请号 US201313830246 申请日期 2013.03.14
申请人 Silicon Storage Technology, Inc. 发明人 NGUYEN Hung Quoc;TRAN Hieu Van;NGUYEN Hung Thanh
分类号 G06F1/32 主分类号 G06F1/32
代理机构 代理人
主权项 1. A power management circuit for use in a memory device, comprising: a system device clock for generating a clock signal; a timing circuit for identifying a time interval; a first circuit for receiving the clock signal and counting pulses of the clock signal within the time interval; a second circuit for changing the bias voltage of a sense amplifier in response to the output of the counter circuit.
地址 San Jose CA US