发明名称 |
POWER MANAGEMENT FOR A MEMORY DEVICE |
摘要 |
An improved method and apparatus for performing power management in a memory device is disclosed. |
申请公布号 |
US2014281611(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201313830246 |
申请日期 |
2013.03.14 |
申请人 |
Silicon Storage Technology, Inc. |
发明人 |
NGUYEN Hung Quoc;TRAN Hieu Van;NGUYEN Hung Thanh |
分类号 |
G06F1/32 |
主分类号 |
G06F1/32 |
代理机构 |
|
代理人 |
|
主权项 |
1. A power management circuit for use in a memory device, comprising:
a system device clock for generating a clock signal; a timing circuit for identifying a time interval; a first circuit for receiving the clock signal and counting pulses of the clock signal within the time interval; a second circuit for changing the bias voltage of a sense amplifier in response to the output of the counter circuit. |
地址 |
San Jose CA US |