FORMING STRAINED AND RELAXED SILICON AND SILICON GERMANIUM FINS ON THE SAME WAFER

摘要

Various embodiments form strained and relaxed silicon and silicon germanium fins on a semiconductor wafer. In one embodiment a semiconductor wafer is formed. The semiconductor wafer comprises a substrate, a dielectric layer, and a strained silicon germanium (SiGe) layer. At least one region of the strained SiGe layer is transformed into a relaxed SiGe region. At least one strained SiGe fin is formed from a first strained SiGe region of the strained SiGe layer. At least one relaxed SiGe fin is formed from a first portion of the relaxed SiGe region. Relaxed silicon is epitaxially grown on a second strained SiGe region of the strained SiGe layer. Strained silicon is epitaxially grown on a second portion of the relaxed SiGe region. At least one relaxed silicon fin is formed from the relaxed silicon. At least one strained silicon fin is formed from the strained silicon.

主权项

1. A method for fabricating strained and relaxed silicon and silicon germanium fins on a semiconductor wafer comprising a substrate, a dielectric layer formed on the substrate, and a strained silicon germanium (SiGe) layer formed on the dielectric layer, the method comprising:
transforming at least one region of the strained SiGe layer into at least one relaxed SiGe region; forming at least one strained SiGe fin from at least a first strained SiGe region of the strained SiGe layer, and at least one relaxed SiGe fin from at least a first portion of the at least one relaxed SiGe region; epitaxially growing relaxed silicon on at least a second strained SiGe region of the strained SiGe layer, and strained silicon on at least a second portion of the relaxed SiGe region; and forming at least one relaxed silicon fin from the relaxed silicon, and at least one strained silicon fin from the strained silicon.