STRIPE ORIENTATION FOR TRENCHES AND CONTACT WINDOWS

摘要

A semiconductor device includes a semiconductor layer having first and second main surfaces, with the first surface defining a plane containing first and second perpendicular axes. A first gate is disposed proximate the first main surface and extends parallel to the first axis. A dielectric layer is formed on the first main surface and separates the first gate from the first main surface. First and second trenches are formed in the semiconductor layer proximate the first gate and spaced apart in a direction parallel to the first axis. First and second pluralities of contact windows are formed in the dielectric layer to expose the first main surface and are respectively arranged in first and second rows extending between the first and second trenches in a direction parallel to the first axis. Adjacent contact windows in each first row are separated only by the dielectric layer.

主权项

1. A semiconductor device comprising:
a semiconductor layer having a first main surface and an opposing second main surface, the first main surface defining a plane containing a first axis and a second axis perpendicular to the first axis; a first gate disposed proximate the first main surface of the semiconductor layer and extending parallel to the first axis; a dielectric layer formed on the first main surface of the semiconductor layer and separating the first gate from the first main surface of the semiconductor layer; a first trench formed in the semiconductor layer proximate the first gate and extending from the first main surface of the semiconductor layer toward the second main surface of the semiconductor layer; a second trench formed in the semiconductor layer proximate the first gate and extending from the first main surface of the semiconductor layer toward the second main surface of the semiconductor layer, the first and second trenches being spaced apart from one another in a direction parallel to the first axis; a first plurality of contact windows formed in the dielectric layer and arranged in a first row extending between the first and second trenches in a direction parallel to the first axis, adjacent contact windows in the first row being separated from one another only by the dielectric layer, each of the first plurality of contact windows exposing a portion of the first main surface of the semiconductor layer; and a second plurality of contact windows formed in the dielectric layer and arranged in a second row extending between the first and second trenches parallel to the first row, adjacent contact windows in the second row being separated only by the dielectric layer, each of the second plurality of contact windows exposing a portion of the first main surface of the semiconductor layer.