发明名称 |
Method for Forming ReRAM Chips Operating at Low Operating Temperatures |
摘要 |
Forming a resistive memory structure at a temperature well above the operating temperature can reduce the forming voltage and create a defect distribution with higher stability and lower programming voltages. The forming temperature can be up to 200 C above the operating temperature. The memory chip can include an embedded heater in the chip package, allowing for a chip forming process after packaging. |
申请公布号 |
US2014273300(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201314072611 |
申请日期 |
2013.11.05 |
申请人 |
Intermolecular, Inc. |
发明人 |
Pramanik Dipankar;Chiang Tony P. |
分类号 |
H01L45/00;H01L21/66 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method to prepare a memory device, comprising forming a switching element of the memory device at a forming temperature higher than an operating temperature of the memory device. |
地址 |
San Jose CA US |