发明名称 Method for Forming ReRAM Chips Operating at Low Operating Temperatures
摘要 Forming a resistive memory structure at a temperature well above the operating temperature can reduce the forming voltage and create a defect distribution with higher stability and lower programming voltages. The forming temperature can be up to 200 C above the operating temperature. The memory chip can include an embedded heater in the chip package, allowing for a chip forming process after packaging.
申请公布号 US2014273300(A1) 申请公布日期 2014.09.18
申请号 US201314072611 申请日期 2013.11.05
申请人 Intermolecular, Inc. 发明人 Pramanik Dipankar;Chiang Tony P.
分类号 H01L45/00;H01L21/66 主分类号 H01L45/00
代理机构 代理人
主权项 1. A method to prepare a memory device, comprising forming a switching element of the memory device at a forming temperature higher than an operating temperature of the memory device.
地址 San Jose CA US