发明名称 |
BACKSIDE SENSING BIOFET WITH ENHANCED PERFORMANCE |
摘要 |
The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure having a treated layer adjacent to the channel region, an isolation layer, and a dielectric layer in an opening of the isolation layer on the treated layer. The dielectric layer and the treated layer are disposed on opposite side of the transistor from a gate structure. The treated layer may be a lightly doped channel layer or a depleted layer. |
申请公布号 |
US2014264467(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201313905912 |
申请日期 |
2013.05.30 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Cheng Chun-Wen;Liu Yi-Shao;Lai Fei-Lung;Lin Wei-Cheng;Liao Ta-Chuan;Yang Chien-Kuo |
分类号 |
G01N27/414 |
主分类号 |
G01N27/414 |
代理机构 |
|
代理人 |
|
主权项 |
1. A biological field-effect transistors (BioFET) device, comprising:
a substrate; a transistor structure in the substrate having a gate structure over a source region, a drain region, and an active region, the active region including a channel region and a treated layer; an isolation layer on a side of the substrate opposite from the gate structure, said isolation layer having an opening at the active region of the transistor structure; and a dielectric layer in the opening. |
地址 |
Hsin-Chu TW |