Vertical Hall Effect Element With Structures to Improve Sensitivity

摘要

A vertical Hall Effect element includes one or more of: a low voltage P-well region disposed at a position between pickups of the vertical Hall Effect element, Light-N regions disposed under the pickups, a pre-epi implant region, or two epi regions to result in an improved sensitivity of the vertical Hall Effect element. A method results in the vertical Hall Effect element having the improved sensitivity.

主权项

1. A Hall Effect element disposed over a substrate, the Hall Effect element comprising:
an N-type epitaxial layer disposed over the substrate; a plurality of pickups implanted and diffused into the epitaxial layer, adjacent pairs of the plurality of pickups separated by separation regions, each one of the plurality of pickups comprising a respective N-plus type diffusion; and a plurality of Light-N regions implanted and diffused into the epitaxial layer, each one of the plurality of Light-N regions disposed under a respective one of the plurality of pickups, wherein the Hall Effect element is configured to generate a Hall voltage between at least one pair of the plurality of pickups, wherein the Hall voltage is most responsive to a magnetic field directed parallel to a major surface of the substrate.