INFRARED SENSOR AND INFRARED SENSOR CHIP

摘要

An infrared sensor (101) comprises: a semiconductor substrate having a recess in an upper surface; an upper-part surface having a sensor opening part (3) that is opened so as to correspond to the recess, the upper-part surface being formed on the upper side of the semiconductor substrate; and a sensor part (2) that transverses the second opening part (3) in an S shape while set at a distance from the inner surface of the recess so as to connect the space between a first location (61) and a second location (62) of the inner periphery of the sensor opening part (3). The sensor part (2) is sealed in a vacuum. A center part (4) of the sensor part (2) is disposed so as to be capable of receiving infrared light from an observed object. The sensor part (2) is provided with a thermoelectric conversion structure for converting a temperature difference between the center part (4) and the first location (61) and second location (62) into an electric signal.