METHOD FOR PRODUCING SEMICONDUCTOR SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor single crystal that may reduce a variation in a resistivity in a cross section, particularly in a central part of the single crystal.SOLUTION: Provided is a method for producing a semiconductor single crystal by a FZ process in which the semiconductor single crystal is grown by partially heating a raw crystal with an induction heating coil while rotating the raw crystal to form a molten zone and by moving the molten zone from one side of the raw crystal to the other side. The rotating direction of the semiconductor single crystal is changed alternately so that the semiconductor single crystal is rotated in one direction about a central axis, after which it is rotated in the direction opposite to the one direction and that a rotating acceleration when the rotating direction is changed from the one direction to the opposite direction is different from that when the rotating direction is changed from the opposite direction to the one direction.