METHODS OF INCREASING SPACE FOR CONTACT ELEMENTS BY USING A SACRIFICIAL LINER AND THE RESULTING DEVICE

摘要

One method includes forming a sidewall spacer adjacent a gate structure, forming a first liner layer on the sidewall spacer, forming a second liner layer on the first liner layer, forming a first layer of insulating material above the substrate and adjacent the second liner layer, selectively removing at least portions of the second liner layer relative to the first liner layer, forming a second layer of insulating material above the first layer of insulating material, performing at least one second etching process to remove at least portions of the first and second layers of insulating material and at least portions of the first liner layer so as to thereby expose an outer surface of the sidewall spacer, and forming a conductive contact that contacts the exposed outer surface of the sidewall spacer and a source/drain region of the transistor.

主权项

1. A method of forming a transistor, comprising:
forming a gate structure above a semiconductor substrate; forming a sidewall spacer adjacent said gate structure; forming a first liner layer on at least said sidewall spacer; forming a second liner layer on said first liner layer; forming a first layer of insulating material above said substrate and adjacent said second liner layer; performing at least one etching process to selectively remove at least portions of said second liner layer relative to said first liner layer and said first layer of insulating material so as to thereby form a space between said first layer of insulating material and said first liner layer; and forming a second layer of insulating material above said first layer of insulating material.