LIGHT DETECTION DEVICE

摘要

A semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in a semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on a first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to a second principal surface side. A mounting substrate includes a plurality of electrodes arranged corresponding to the respective through-hole electrodes on a third principal surface side. The through-hole electrodes and the electrodes are electrically connected through bump electrodes, and a side surface of the semiconductor substrate and a side surface of a glass substrate are flush with each other.

主权项

1. A light detection device comprising:
a semiconductor light detection element having a semiconductor substrate including first and second principal surfaces opposed to each other; a mounting substrate arranged as opposed to the semiconductor light detection element and having a third principal surface opposed to the second principal surface of the semiconductor substrate; and a glass substrate arranged as opposed to the semiconductor light detection element and having a fourth principal surface opposed to the first principal surface of the semiconductor substrate, wherein the semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in the semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on the first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to the second principal surface side, wherein the mounting substrate includes a plurality of first electrodes arranged corresponding to the respective through-hole electrodes on the third principal surface side, and a signal processing unit electrically connected to the plurality of first electrodes and configured to process output signals from the respective avalanche photodiodes, wherein the through-hole electrodes and the first electrodes are electrically connected through bump electrodes, and wherein a side surface of the semiconductor substrate and a side surface of the glass substrate are flush with each other.