| 摘要 |
An apparatus for manufacturing silicon carbide according to the present invention includes: a crucible for charging carbonized silicon (Si) and graphite (C); and an electromagnetism applying coil surrounding the outer surface of the crucible while applying high-frequency electromagnetic field onto the crucible. The method for manufacturing silicon carbide includes: a step for charging silicon (Si) and graphite (C) into the crucible; a step for generating silicon carbide by melting the silicon by heating the graphite by applying a first high-frequency electromagnetic field to the crucible; and a step for recovering the silicon carbide by moving the silicon carbide toward the surface of the crucible by applying a second high-frequency electromagnetic field to the crucible. |
