发明名称 |
Nonvolatile semiconductor memory device and method of manufacturing the same |
摘要 |
A nonvolatile semiconductor memory device including a memory cell configured to store data and a resistor element provided around the memory cell. The memory cell includes a charge storage layer provided above a substrate, a first semiconductor layer formed on a top surface of the charge storage layer via an insulating layer, and a first low resistive layer formed on a top surface of the first semiconductor layer and having resistance lower than that of the first semiconductor layer. The resistor element includes a second semiconductor layer formed on the same layer as the first semiconductor layer, and a second low resistive layer formed on the same layer as the first low resistive layer and on a top surface of the second semiconductor layer, having resistance lower than that of the second semiconductor layer. |
申请公布号 |
US8836010(B2) |
申请公布日期 |
2014.09.16 |
申请号 |
US201213344765 |
申请日期 |
2012.01.06 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Fukuda Koichi;Tanaka Rieko;Abe Takumi |
分类号 |
H01L29/792;H01L27/115;H01L27/105;H01L49/02 |
主分类号 |
H01L29/792 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A nonvolatile semiconductor memory device comprising:
a memory cell; and a resistor element provided around the memory cell, the memory cell including: a charge storage layer provided above a substrate; a first semiconductor layer formed on a top surface of the charge storage layer via an insulating layer, the first semiconductor layer having a plain top surface; and a first low resistive layer formed on a top surface of the first semiconductor layer and having a resistance lower than that of the first semiconductor layer, the resistor element includes: a second semiconductor layer formed in the same layer as the first semiconductor layer, the second semiconductor having a plain top surface with the same height as the plain top surface of the first semiconductor layer; and a second low resistive layer formed in the same layer as the first low resistive layer and on a top surface of the second semiconductor layer, the second semiconductor layer being formed to extend in a first direction parallel to the substrate, and the second low resistive layer being formed at both ends of the second semiconductor layer, and wherein: the resistor element includes an interlayer insulation layer formed on the substrate, a surface of the interlayer insulation layer having the same height as a surface of the insulating layer; and the second semiconductor layer is formed directly on the interlayer insulation layer. |
地址 |
Tokyo JP |