Semiconductor process

摘要

A semiconductor process includes the following steps. A first structure and a second structure are formed on a substrate. An oxide layer is entirely formed to cover the first structure and the second structure. A nitride layer is formed to entirely cover the oxide layer. A dry etching process is performed to remove a part of the nitride layer on the first structure. A wet etching process is performed to entirely remove the nitride layer and the oxide layer on the first structure and the second structure.

主权项

1. A semiconductor process, comprising:
forming a first structure and a second structure on a substrate; forming an oxide layer to entirely cover the first structure and the second structure; forming a nitride layer to entirely cover the oxide layer; performing a dry etching process to remove only a part of the nitride layer directly above the first structure, wherein the part of the nitride layer located on the sides of the first structure above the substrate and all of the oxide layer remain intact; and performing a wet etching process to entirely remove the nitride layer and the oxide layer on the first structure and the second structure.