| 发明名称 | Pre-sintered semiconductor die structure | ||
| 摘要 | A sintered connection is formed by pressing a semiconductor die against a substrate with a dried sintering material interposed between the substrate and the semiconductor die, the dried sintering material having sintering particles and a solvent. The substrate is heated to a temperature below a sintering temperature of the dried sintering material while the semiconductor die is pressed against the substrate to form local sinter connections between adjacent ones of the sintering particles. The local sinter connections collectively provide a stable joint that fixes the semiconductor die to the substrate prior to sintering. A sintered connection is then formed between the semiconductor die and the substrate from the dried sintering material, after the stable joint is formed. | ||
| 申请公布号 | US8835299(B2) | 申请公布日期 | 2014.09.16 |
| 申请号 | US201213597311 | 申请日期 | 2012.08.29 |
| 申请人 | Infineon Technologies AG | 发明人 | Speckels Roland;Böwer Lars;Heuck Nicolas;Oeschler Niels |
| 分类号 | H01L21/30;H01L21/46;H01L23/00 | 主分类号 | H01L21/30 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A method of forming a sintered connection, comprising: pressing a semiconductor die against a substrate with a dried sintering material interposed between the substrate and the semiconductor die, the dried sintering material comprising sintering particles and a solvent; heating the substrate to a temperature below a sintering temperature of the dried sintering material while the semiconductor die is pressed against the substrate to form local sinter connections between adjacent ones of the sintering particles, the local sinter connections collectively providing a stable joint that fixes the semiconductor die to the substrate prior to sintering; and forming a sintered connection between the semiconductor die and the substrate from the dried sintering material, after the stable joint is formed. | ||
| 地址 | Neubiberg DE | ||