发明名称 |
FinFET structure with multiple workfunctions and method for fabricating the same |
摘要 |
A method for fabricating a multiple-workfunction FinFET structure includes depositing a first workfunction material in a layer in a plurality of trenches of the FinFET structure and etching the first workfunction material layer so as to completely remove the first workfunction material layer from all but a first trench of the plurality of trenches. Further, the method includes depositing a second workfunction material in a layer in the plurality of trenches and etching the second workfunction material layer so as to completely remove the second workfunction material layer from all but a second trench of the plurality of trenches. Still further, the method includes depositing a third workfunction material in a layer in the plurality of trenches. |
申请公布号 |
US8835233(B2) |
申请公布日期 |
2014.09.16 |
申请号 |
US201213539727 |
申请日期 |
2012.07.02 |
申请人 |
GlobalFoundries, Inc. |
发明人 |
Wei Andy C.;Sehgal Akshey;Allimi Bamidele S. |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
代理机构 |
Ingrassia Fisher & Lorenz, P.C. |
代理人 |
Ingrassia Fisher & Lorenz, P.C. |
主权项 |
1. A method for fabricating a multiple-workfunction FinFET structure, comprising:
depositing an n-type workfunction material in a layer over a plurality of fins and in a plurality of trenches between said fins; depositing a deep ultraviolet light-absorbing oxide (DUO) material over the n-type workfunction material layer; differentially etching the DUO material so as to completely remove the DUO material from all but a first trench of the plurality of trenches, wherein at least a portion of the n-type workfunction material remains in the first trench; depositing a p-type workfunction material in a layer over the plurality of fins and in the plurality of trenches between said fins; depositing a DUO material over the p-type workfunction material layer; differentially etching the DUO material so as to completely remove the DUO material from all but a second trench of the plurality of trenches, wherein at least a portion of the p-type workfunction material remains in the second trench; and depositing a mid-gap workfunction material in a layer over the plurality of fins and in the plurality of trenches. |
地址 |
Grand Cayman KY |