SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND MICRO PROCESSOR, PROCESSOR, SYSTEM, DATA STORAGE SYSTEM AND MEMORY SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE

摘要

A semiconductor device and a manufacturing method thereof are provided. The manufacturing method of the semiconductor device according to an embodiment of the present invention includes a step of forming a sacrificial layer on a substrate including a first area and a second area; a step of forming a trench for a gate by selectively etching the sacrificial layer and the substrate in the first area; a step of forming a first gate which buries a portion of the trench for a gate; a step of forming a gate protection layer which buries the remaining portion of the trench for a gate on the first gate; a step of removing the sacrificial layer in the first area; a step of forming a conductive plug within a space without the sacrificial layer; a step of removing the sacrificial layer in the second area; and a step of forming a second gate on the substrate in the second area.