发明名称 FILM DEPOSITION DEVICE AND FILM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To efficiently deposit a film and realize ALD with a simple constitution when a film is deposited on a substrate conveyed using plasma ALD.SOLUTION: A film deposition device has a substrate conveying mechanism, a plasma generation electrode, a space partition wall, and an injector. The plasma generation electrode is provided opposite to a substrate conveying path, and generates plasma using reactive gas by feeding power. The space partition wall is provided between the conveying path and the plasma generation electrode. Plural slit-like through holes through which one part of the plasma or radicals or ions generated from the plasma pass are spaced on the space partition wall. The injector is provided between the space partition wall and the conveying path, so that it is held from both sides in the conveying direction by the adjacent through holes, so as to supply film depositing gas toward the substrate from a film depositing gas supply port.
申请公布号 JP2014167152(A) 申请公布日期 2014.09.11
申请号 JP20130039726 申请日期 2013.02.28
申请人 MITSUI ENG & SHIPBUILD CO LTD 发明人 MORI YASUNARI;MIYATAKE NAOMASA;HATTORI NOZOMI
分类号 C23C16/455;H01L21/31;H05H1/46 主分类号 C23C16/455
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