METHOD AND DEVICE FOR EVALUATING ATOMIC VACANCY IN SILICON WAFER SURFACE LAYER

摘要

PROBLEM TO BE SOLVED: To provide a novel method and a device for evaluating an atomic vacancy in a silicon wafer surface layer.SOLUTION: A method for evaluating an atomic vacancy in a silicon wafer surface layer includes: an element formation step of forming a pair of comb-shaped electrodes 31, 32 having a comb shape, via piezoelectric thin films 29, 30, on the same surface of a silicon specimen 6; a detection step of, while cooling the silicon specimen 6 and applying an external magnetic field thereon, oscillating an ultrasonic pulse from one 31 of the comb-shaped electrodes and receiving the ultrasonic pulse propagating on the surface of the silicon specimen 6 by the other 31 of the comb-shaped electrodes, and thereby detecting a phase difference between the ultrasonic pulse oscillated from the one 31 of the comb-shaped electrodes and the ultrasonic pulse received by the other 32 of the comb-shaped electrodes; and an evaluation step of determining an elastic constant of the surface layer of the silicon specimen 6 on the basis of the phase difference and evaluating an atomic vacancy in the surface layer of the silicon specimen 6 on the basis of a change of an elastic constant relative to temperatures or a change of an elastic constant relative to a magnetic field intensity.