发明名称 |
Surface Treatment Method and Apparatus for Semiconductor Packaging |
摘要 |
A surface treatment and an apparatus for semiconductor packaging are provided. In an embodiment, a surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite. |
申请公布号 |
US2014252614(A1) |
申请公布日期 |
2014.09.11 |
申请号 |
US201313895099 |
申请日期 |
2013.05.15 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chang Chih-Horng;Deng Jie-Cheng;Kuo Tin-Hao;Chen Ying-Yu |
分类号 |
H01L21/56;H01L23/48 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a semiconductor device, the method comprising:
providing a substrate having an integrated circuit die attached thereto, the substrate having a metal layer formed thereon; treating exposed surfaces of the metal layer, the treating creating a roughened surface having nanowires; and applying a molding compound or a underfill material over the metal layer. |
地址 |
Hsin-Chu TW |