发明名称 Surface Treatment Method and Apparatus for Semiconductor Packaging
摘要 A surface treatment and an apparatus for semiconductor packaging are provided. In an embodiment, a surface of a conductive layer is treated to create a roughened surface. In one example, nanowires are formed on a surface of the conductive layer. In the case of a copper conductive layer, the nanowires may include a CuO layer. In another example, a complex compound is formed on a surface of the conductive layer. The complex compound may be formed using, for example, thiol and trimethyl phosphite.
申请公布号 US2014252614(A1) 申请公布日期 2014.09.11
申请号 US201313895099 申请日期 2013.05.15
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chang Chih-Horng;Deng Jie-Cheng;Kuo Tin-Hao;Chen Ying-Yu
分类号 H01L21/56;H01L23/48 主分类号 H01L21/56
代理机构 代理人
主权项 1. A method of forming a semiconductor device, the method comprising: providing a substrate having an integrated circuit die attached thereto, the substrate having a metal layer formed thereon; treating exposed surfaces of the metal layer, the treating creating a roughened surface having nanowires; and applying a molding compound or a underfill material over the metal layer.
地址 Hsin-Chu TW