SEMICONDUCTOR DEVICES COMPRISING FLOATING GATE TRANSISTORS AND METHODS OF FORMING SUCH SEMICONDUCTOR DEVICES

摘要

Semiconductor devices include one or more transistors having a floating gate and a control gate. In at least one embodiment, the floating gate comprises an intermediate portion extending between two end portions. The intermediate portion has an average cross-sectional area less than one or both of the end portions. In some embodiments, the intermediate portion may comprise a single nanowire. In additional embodiments, semiconductor devices have one or more transistors having a control gate and a floating gate in which a surface of the control gate opposes a lateral side surface of a floating gate that defines a recess in the floating gate. Electronic systems include such semiconductor devices. Methods of forming semiconductor devices include, for example, forming a floating gate having an intermediate portion extending between two end portions, and configuring the intermediate portion to have an average cross-sectional area less than one or both of the end portions.

主权项

1. A semiconductor device including at least one transistor comprising:
a floating gate including:
a first end portion;a second end portion opposite the first end portion; andan intermediate portion extending between the first end portion and the second end portion, the intermediate portion including a curved recess in at least one outside surface of the intermediate portion; and a control gate capacitively coupled with and electrically isolated from the floating gate, the control gate comprising at least one protrusion disposed at least partially within the curved recess of the intermediate portion.