SPUTTERING TARGET AND METHOD FOR PRODUCING SAME

摘要

Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 15 to 40 at % of Ga, 0.1 to 5 at % of Bi, and the balance composed of Cu and unavoidable impurities with respect to all metal elements in the sputtering target. The method for producing the sputtering target includes a step of melting at least Cu, Ga and Bi as simple substances or an alloy that contains two or more of these elements at 1,050° C. or higher to produce an ingot.

主权项

1. A sputtering target having a component composition containing 15 to 40 at % of Ga, 0.1 to 5 at % of Bi, and the balance composed of Cu and unavoidable impurities with respect to all metal elements in the sputtering target.