Nonvolatile Memory Elements

摘要

Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.

主权项

1. A method of forming a nonvolatile memory element comprising:
forming a first conductive layer; forming an oxide layer over the first conductive layer; and forming a second conductive layer over the oxide layer; wherein the first conductive layer and the second conductive layer are operable as electrodes; wherein the oxide layer switches from a high resistance state to a low resistance state in response to a set voltage VSET applied across the electrodes; wherein the oxide layer switches from the low resistance state to the high resistance state in response to a reset voltage VRESET applied across the electrodes; wherein the oxide layer comprises a first element and a second element; wherein the first element and the second element are different from each other and from oxygen; and wherein at least one of the first element and the second element is selected such that a difference between the set voltage Vset and the reset voltage Vreset matches a predetermined value.