MULTILAYER DIELECTRIC STRUCTURES FOR SEMICONDUCTOR NANO-DEVICES

摘要

Multilayer dielectric structures are provided having silicon nitride (SiN) and silicon oxynitride (SiNO) films for use as capping layers, liners, spacer barrier layers, and etch stop layers, and other components of semiconductor nano-devices. For example, a semiconductor structure includes a multilayer dielectric structure having multiple layers of dielectric material including one or more SiN layers and one or more SiNO layers. The layers of dielectric material in the multilayer dielectric structure have a thickness in a range of about 0.5 nanometers to about 3 nanometers.

主权项

1. A method for fabricating a semiconductor structure, comprising:
forming a BEOL (back end of line) interconnect structure comprising a metal line; forming a conformal multilayer barrier structure on the metal line, wherein forming the conformal multilayer barrier structure comprises:
forming a first multilayer structure directly on the metal line, wherein the first multilayer structure comprises a plurality of stoichiometric, insulating silicon nitride (SiN) layers; andforming a second multilayer structure directly on the first multilayer structure, wherein the second multilayer structure comprises a plurality of insulating silicon oxynitride (SiNO) layers, wherein the SiNO layers are in-situ oxidized SiN layers with a varying oxygen composition profile,wherein each SiN and SiNO layer in the first and second multilayer structures has a thickness of less than or equal to about 2 nanometers.