PATTERNED SILICON-ON-PLASTIC (SOP) TECHNOLOGY AND METHODS OF MANUFACTURING THE SAME

摘要

A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive.

主权项

1. A semiconductor device comprising:
a semiconductor stack structure; a wafer handle attached to the semiconductor stack structure and having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure; and a polymer substantially filling the at least one aperture and contacting the exposed portion of the semiconductor stack structure, wherein the polymer is thermally conductive and electrically resistive.