Methods, devices, and systems for dealing with threshold voltage change in memory devices

摘要

The present disclosure includes methods, devices, and systems for dealing with threshold voltage change in memory devices. A number of embodiments include an array of memory cells and control circuitry having sense circuitry coupled to the array. The control circuitry is configured to determine changes in threshold voltages (Vts) associated with the memory cells without using a reference cell, and adjust the sense circuitry based on the determined changes and without using a reference cell.

主权项

1. A memory device, comprising:
an array of memory cells; and control circuitry coupled to the array and configured to:
perform a soft sensing operation on the memory cells;determine a number of changes in threshold voltages associated with the memory cells based on the soft sensing operation; andadjust a voltage used to sense a state of the memory cells based on the number of determined changes.