Substrate processing apparatus and substrate processing method

摘要

A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

主权项

1. A substrate processing apparatus comprising:
a substrate holding unit configured to hold a substrate horizontally; a rotation driving unit configured to rotate the substrate holding unit; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate held by the substrate holding unit; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate held by the substrate holding unit; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate held by the substrate holding unit; and a second gas supply port provided separately from the first gas supply port and configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate held by the substrate holding unit, wherein the first gas supply port is disposed at a lower side of the substrate held by the substrate holding unit, and includes a first gas ejection port connected to a first gas diffusion space, and a heater adjacent to the first gas diffusion space, thereby supplying the first gas to the peripheral portion of the substrate from the lower side of the substrate.