| 摘要 |
PROBLEM TO BE SOLVED: To provide a method with which it is possible to detect a degree of contamination of an epitaxial growth device with high sensitivity.SOLUTION: First, a silicon wafter, which will serve as a substrate of an epitaxial wafer for contamination evaluation (sample wafer), is prepared (S1) and is transported into a reactor of an epitaxial growth device that is an evaluation target (S2). Next, the silicon wafer is heat-treated in a hydrogen atmosphere (S3). Then, a material gas and a carrier gas are allowed to flow into the reactor to cause an epitaxial film to grow on the silicon wafer at an epitaxial growth temperature higher than that at the time of production of an epitaxial wafer that is a product (S4), thereby producing the epitaxial wafer for contamination evaluation. Following this, the produced epitaxial wafer for contamination evaluation is transported out from the reactor (S5) and a lifetime value of the transported-out epitaxial wafer is measured (S6). Finally, a degree of contamination of the epitaxial growth device that is the evaluation target is evaluated with reference to the measured lifetime value (S7). |
