SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device, which can satisfy both of inhibition of a slow trap in a P-type MOS transistor using a silicon nitride film and achievement of low 1/f noise of an N-type MOS transistor and a P-type MOS transistor.SOLUTION: The semiconductor device manufacturing method comprises the steps of: forming a surface-channel N-type MOS transistor 30 on an N-type MOS transistor formation part of a silicon substrate 1; forming a buried-channel P-type MOS transistor 40 on a P-type MOS transistor formation part of the silicon substrate 1; covering the N-type MOS transistor 30 and the P-type MOS transistor 40 by depositing a silicon nitride film 20 on the silicon substrate 1; and partially etching the silicon nitride film 20 to remove the silicon nitride film 20 from the N-type MOS transistor 30 and leaving the silicon nitride film 20 on the P-type MOS transistor 40.